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PD -9.1255
IRL630
HEXFET (R) Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150C Operating Temperature Fast Switching Ease of paralleling Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
VDSS = 200V RDS(on) = 0.40 ID = 9.0A
Absolute Maximum Ratings
Parameter
ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
9.0 5.7 36 74 0.59 10 250 9.0 7.4 5.0 -55 to + 150 300 (1.6mm from case) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.
---- ---- ----
Typ.
---- 0.50 ----
Max.
1.7 ---- 62
Units
C/W
Revision 0
IRL630
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 200 --- --- --- 1.0 4.8 --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.40 VGS = 5.0V, I D = 5.4A 0.50 VGS = 4.0V, I D = 4.5A 2.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 5.4A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, T J = 125C 100 VGS = 10V nA -100 VGS = -10V 40 ID = 9.0A 5.5 nC VDS = 160V 24 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V ns --- ID = 9.0A --- RG = 6.0 --- RD = 11, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- and center of die contact --- 1100 --- VGS = 0V --- 220 --- pF VDS = 25V --- 70 --- = 1.0MHz, See Fig. 5
Typ. --- 0.27 --- --- --- --- --- --- --- --- --- --- --- 8.0 57 38 33
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 230 1.7 9.0 A 36 2.0 350 2.6 V ns C
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I S = 9.0A, V GS = 0V TJ = 25C, I F = 9.0A di/dt = 100A/s
S+LD)
Intrinsic turn-on time is negligible (turn-on is dominated by L
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 9.0A, di/dt 120A/s, V DD V(BR)DSS, T J 150C Pulse width 300s; duty cycle 2%.
VDD = 25V, starting T J = 25C, L = 4.6mH R G = 25, IAS = 9.0A. (See Figure 12)
IRL630
100
VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP
10
1
2.25V 20s PULSE WIDTH Tc = 25C
0.1 1 10 100
0.1
A
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TC = 25oC
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
Fig 2. Typical Output Characteristics, TC = 150oC
R DS(on) , Drain-to-Source On Resistance (Normalized)
100
2.5
ID = 9.0A
I D , Drain-to-Source Current (A)
2.0
10
TJ = 150C
1.5
1
TJ = 25C
1.0
0.1
0.5
0.01 2.0 2.5 3.0 3.5
VDS = 50V 20s PULSE WIDTH
4.0 4.5
A
5.0
0.0 -60 -40 -20
VGS = 5.0V
0 20 40 60
A
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL630
2000
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz Ciss = Cgs + C gd , Cds SHORTED Crss = C gd Coss = Cds + C gd
10
I D = 9.0A VDS = 160V VDS = 100V VDS = 40V
8
C, Capacitance (pF)
1500
Ciss
1000
6
4
Coss
500
Crss
0 1 10
2
A
100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10s
10
I D , Drain Current (A)
10
100s
TJ = 150C TJ = 25C
1
1ms
1
10ms 100ms
0.1 0 0.4 0.8 1.2
VGS = 0V
A
0.1 1
TC = 25C TJ = 150C Single Pulse
10 100 10 00
1.6
V SD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL630
VDS
10
RD
VGS RG
D.U.T. VDD
ID, Drain Current (Amps)
8
5.0 V
6 Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
4
2
0 25 50 75 100 125
150
A
TC , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50
0.20 0.10 0.1 0.05
PDM
t
0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
N o te s : 1 . D u ty fa c to r D = t / t 12 2 . P e a k TJ = P D M x Z th J C + T C
1
t 2
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10 A
A
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL630
EAS , Single Pulse Avalanche Energy (mJ)
5.0V
600
TOP
500
ID 9.0A 5.7A BOTTOM 4.0A
Fig 12a. Unclamped Inductive Test Circuit
400
300
200
100
0
VDD = 50V
25 50 75 100 125
A
150
Starting TJ , Juntion Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms
5.0V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL630
Peak Diode Recovery dv/dt Test Circuit
D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
RG
* * * *
dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRL630
Package Outline
TO-220AB Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139)
-B-
-A6.47 (.255) 6.10 (.240) 1.15 (.045) MIN
1 2 3
4.69 (.185) 4.20 (.165)
1.32 (.052) 1.22 (.048)
4
15.24 (.600) 14.84 (.584)
NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOW N MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-220AB.
3X
14.09 (.555) 13.47 (.530)
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
4.06 (.160) 3.55 (.140)
3X
3X
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
MBAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X
2.92 (.115) 2.64 (.104)
CONFORMS TO JEDEC OUTLINE TO-220AB
Dimensions in Millimeters and (Inches)
Part Marking Information
TO-220AB
PART NUMBER IRF1010 9246 9B ASSEMBLY LOT CODE 1M DATE CODE (YYWW) YY = YEAR WW = WEEK
EXAMPLE: THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M
INTERNATIONAL RECTIFIER LOGO
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